semiconductor rohs rohs NKD160AS/nkj160as/nkc160as series features ? high voltage ? ( electrically isolated by dbc ceramic ai 2 3 o ) ? 3000 v rms isolating voltage ? industrial standard package ? high surge capability ? glass passivated chips ? modules uses high voltage power in four diodes basic configurations ? simple mounting ? ul approved file e320098 ? compliant to rohs ? designed and qualified for multiple level applications ? dc motor control and drives ? battery charges ? welders ? power converters symbol a ka 2 s i 2 t product summary i f av ( ) 160 a units value a ka s 2 c v 100 251 6000 6300 180 163 1800 400 to 1600 -40 to 150 page 1 of 4 standard recovery diodes, 160 a ( - - ) int a pak power modules all dimensions in millimeters - - + + + ~ nkd nkj - + - nkc modules diode high voltage - , type major ratings and characteristics i f av ( ) t c i f rms ( ) i fsm i t 2 v rrm t j 50 hz 60 hz 50 hz 60 hz range characteristics 160 c n ell high power products 16.5 23 23 17.5 80 93 26 2-?6.5 21 30.5 3-m5 screws 7.5 www.nellsemi.com 1 2 3 11 22 33 1 2 3
page 2 of 4 semiconductor rohs rohs forward conduction parameter symbol test conditions maximum average on-state current at case temperature i f av ( ) 180 , conduction half sine wave maximum rms on state current - i f rms ( ) a maximum peak one cycle, , - on state - - non repetitive surge current i fsm t ms = 10 no voltage reapplied sine half wave, initial t j = t j maximum t ms = 8.3 maximum i 2 t for fusing i 2 t ka 2 s maximum i 2 t for fusing i 2 t t ms to ms no = 0.1 10 , voltage reapplied i fm = 300a , t j = 25 , 180 c conduction maximum forward voltage drop v fm blocking parameter symbol test conditions values maximum peak reverse and off state leakage current - i rrm t j = 150 c rms isolation voltage v iso 50 , , hz circuit to base all terminals shorted t s , = 1 v = 60 t s v units electrical specifications voltage ratings type number voltage code v rrm , maximum repetitive peak reverse voltage v v rsm , - maximum non repetitive peak reverse voltage v i rrm at c 150 ma nkd s 160.. 04 400 500 88 08 800 900 12 1200 1300 14 1400 1500 16 1600 1700 180 , conduction half sine wave ,50hz ,t = 100 c c value 1.4 1800 251 6000 160 100 6300 a c 180 163 8 2500 ma t ms = 10 t ms = 8.3 t ms = 10 t ms = 8.3 ka 2 s 126 114 reapplied 100%v rrm 3000 units nkj160..s nkc160..s n ell high power products www.nellsemi.com NKD160AS/nkj160as/nkc160as series
page 3 of 4 semiconductor rohs rohs thermal and mechanical specifications parameter symbol test conditions values units maximum junction operating temperature range , t j t stg - 40 150 to maximum thermal resistance, junction to ca se per junction r thjc dc operation c/w maximum thermal resistance, case to heatsink per module r thcs mounting surface smooth , , flat and greased mounting torque 10 % iap to heatsink, m6 a mounting compound is recommended and the torque should be rechecked after a period of 3 hours to allow for the spread of the compound. lubricated threads. 4 6 to busbar to iap, m5 approximate weight 140 4.9 case style new int a pak - - c thcs oz. g 0.054 0.21 n.m n ell high power products www.nellsemi.com ordering information table 1 - module type: nkd.nkj and nkc for (diode + diode) module 2 3 - : current rating i f av ( ) 4 - 100 = voltage code x v rrm device code nkd a 4 - assembly type,a for soldering type 16 160 / 3 2 1 NKD160AS/nkj160as/nkc160as series s 5 5 - s for sanrexs iap package
page 4 of 4 semiconductor rohs rohs n ell high power products 0 fig1. power consumption fig2.forward current derating curve fig3.transient thermal impedance fig4.max non-repetitive forward surge current fig5.forward characteristics 120 240 0 0 150 300 0 50 100 150 200 250 50 100 0.001 0 0.15 0.3 0.01 0.1 1 10 100 0 1 10 100 4000 8000 0 0 0.5 1.0 1.5 2.0 100 200 300 400 150 www.nellsemi.com NKD160AS/nkj160as/nkc160as series rec.30 rec.60 rec.120 sin.180 dc rec.60 rec.120 dc sin.180 50hz zth(j-c) typ. max. c 25 c 125 rec.30 maximum power consumption(w) forward current (a) transient thermal impedance( c/w) on-state average current (a) case temperature( c) cyles @ 50hz time (s) on-state peak voltage (v) forward surge current (a) on-state current (a)
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